Effect of gamma irradiation on optical properties of CdSe/ZnS quantum dots embedded in PDMS

WANG Ruirong1,2， GUO Hao1， TANG Jun1， LIU Jun1， LIU Jinping1， LIU Lishuang1

（1. Key Laboratory of Instrumentation Science and Dynamic Measurement (North University of China),Ministray of Education, Taiyuan 030051， China；
2. Department of Electronic Engineering, Taiyuan Institute of Technology, Taiyuan 030008, China）

Abstract： The optical properties of CdSe/ZnS quantum dots (QDs) embedded in polydimethylsiloxane (PDMS) flexible materials after irradiated with γrays were studied. As an embedding matrix, PDMS exhibits the advantage of high radiation hardness. The luminescence spectra and fluorescence lifetime of the irradiated and unirradiated samples were tested. The fluorescence intensity of QDs decreases with the increase of the irradiation dose according to the result of luminescence spectra. The fluorescence intensity of the QDs decreases by 80% after irradiation with a dose of 1 kGy, but the position of the emission peak and the spectral shape of the QDs remain consistent before and after irradiation. In addition, the fluorescence lifetime of QDs is shortened after irradiation. Based on the fluorescence response of QDs to the irradiation of γrays and combined with flexible materials, our work provides a theoretical basis for the application of QDs as a new wearable dosimeter.

Key words： CdSe/ZnS quantum dots； γ irradiation； polydimethylsiloxane (PDMS)； dosimetry

References

［1］KIM E S, THOMAS P, IGOR L M， et al. Biosensing with luminescent semiconductor quantum dots. Sensors, 2006, 6（8）： 925953.
［2］SUN Q, WANG Y A, LI L S, et al. Bright, multicoloured lightemitting diodes based on quantum dots. Nature Photonics, 2007, 1(12)： 717722.
［3］SUN Q J, GURU S, DAI L M, et al. Highly efficient quantumdot lightemitting diodes with DNACTMA as a combined holetransporting and electronblocking layer. ACS Nano, 2009, 3(3)： 737 743.
［4］HEISS M, FONTANA Y, GUSTAFSSON A, et al. Selfassembled quantum dots in a nanowire system for quantum photonics. Nature Materials, 2013, 12(5)： 439444.
［5］PACIFICI D, LEZEC H J, ATWATER H A. Alloptical modulation by plasmonic excitation of CdSe quantum dots. Nature Photonics, 2007, 1(7)： 402406.
［6］ALEXI C A, DAVID C O, XU Y F, et al. Heterojunction photovoltaics using printed colloidal quantum dots as a photosensitive layer. Nano Letters, 2009, 9(2)： 860863
［7］NING Z, VOZNYY O, PAN J, et al. Airstable ntype colloidal quantum dot solids. Nature Materials, 2014, 13(8)： 822828.
［8］LABELLE A J, THON S M, MASALA S, et al. Colloidal quantum dot solar cells exploiting hierarchical structuring. Nano Letters, 2015, 15(2)： 11011108.
［9］NATHAN J W, KRISHNAPRASAD S, BRIAN A A, et al. Rapid degradation of CdSe/ZnS colloidal quantum dots exposed to gamma irradiation. Applied Physics Letters, 2008, 93(17)： 173101.
［10］ROBERT Z S, JEFFREY J L, KUI Y, et al. Optical degradation of CdSe/ZnS quantum dots upon gammaray irradiation. The Journal of Physical Chemistry C, 2009, 113(6)： 25802585.
［11］ZANAZZI E, FAVARO M, FICORELLA A, et al. Proton irradiation effects on colloidal InGaP/ZnS coreshell quantum dots embedded in polydimethylsiloxane： discriminating core from shell radiationinduced defects through time resolved photoluminescence analysis. The Journal of Physical Chemistry C, 2018, 122： 22170 22177.
［12］LETANT S E, WANG T F. Semiconductor quantum dot scintillation under γray irradiation. Nano Letters, 2006, 6(12)： 28772880.
［13］LETANT S E, WANG T F. Study of porous glass doped with quantum dots or laser dyes under alpha irradiation. Applied Physics Letters, 2006, 88(10)： 103110.
［14］MARIE E L, MATHIEU G, CLAUDINE N A, et al. Waterdispersable colloidal quantum dots for the detection of ionizing radiation. Chemical Communications, 2013(99)： 11629.
［15］QUARANTA A, CARTURAN S, CINAUSERO M, et al. Characterization of polysiloxane organic scintillators produced with different phenyl containing blends. Materials Chemistry and Physics, 2013, 137(3)： 951958.
［16］QUARANTA A, CARTURAN S, MARCHI T, et al. Doped polysiloxane scintillators for thermal neutrons detection. Journal of NonCrystalline Solids, 2011, 357(8/9)： 19211925.
［17］LOTTERS J C, OLTHUIS W, VELTINK P H, et al. The mechanical properties of the rubber elastic polymer polydimethylsiloxane for sensor applications. Journal of Micromechanics and Microengineering, 1999, 797(3)： 145147.
［18］AKINS B A, WITHER N J, SANKAR K, et al. Effects of gamma irradiation on optical properties of CdSe/ZnS colloidal quantum dots//The 28th Annual Conference on Lasers and ElectroOptics, May 49, 2008, San Jose, CA, USA. New York: IEEE, 2008: 4552068.
［19］NATHAN J W, KRISHNAPRASAD S, BRIAN A A, et al. Rapid degradation of CdSe/ZnS colloidal quantum dots exposed to gamma irradiation. Applied Physics Letters, 2008, 93(17)： 173101
［20］ZANAZZI E, FAVARO M, FICORELLA A, et al. Radiation induced optical change of ionirradiated CdSeS/ZnS coreshell quantum dots embedded in polyvinyl alcohol, Nuclear Instrument and Methods in Physics Research B, 2018, 435： 327330

.伽马辐照对嵌入PDMS的CdSe/ZnS量子点光学特性的影响

王瑞荣1,2, 郭浩1, 唐军1, 刘俊1, 刘金萍1, 刘丽双1

（1. 中北大学 仪器科学与动态测试教育部重点实验室， 山西 太原 030051； 2. 太原工业学院 电子工程系， 山西 太原 030008）

摘要:将CdSe/ZnS量子点与具有高辐射硬度优点的聚二甲硅氧烷（Polydimethylsiloxane, PDMS）柔性材料结合， 研究了不同辐照剂量的γ射线对嵌入PDMS中的CdSe/ZnS量子点光学特性的影响， 并对辐照样品与未辐照样品进行了发光光谱与荧光寿命测试。 结果表明， 随着辐照剂量的增加， 量子点的发光强度降低， 1 kGy剂量辐照后荧光强度降低了80%， 但量子点的发光峰位置与光谱形状在辐照前后保持一致； 同时辐照后量子点的荧光寿命也发生缩短。 研究得出了量子点对辐射的荧光响应规律， 并与柔性材料结合， 为量子点在新型可穿戴式剂量计中的应用提供理论依据。
 
关键词:CdSe/ZnS量子点； γ辐照； 聚二甲硅氧烷； 剂量计

引用格式：WANG Ruirong， GUO Hao， TANG Jun, et al． Effect of gamma irradiation on optical properties of CdSe/ZnS quantum dots embedded in PDMS． Journal of Measurement Science and Instrumentation， 2022， 13（1）： 122126. DOI： 10．3969／j．issn．16748042．2022．01．014

[full text view]