YANG Li-bo1, ZHANG Xiao-yong1,2, LIANG Wei-ze1
(1. Dept. of Computer Engineering， Taiyuan University， Taiyuan 030032， China; 2. Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China),Ministry of Education, Taiyuan 030051, China)
Abstract： This paper conducts an analysis of HP model of a memristor and memory cells of a differential type memristor, forms a classic array of the memristor using the HP model, and does the stimulation of its storage capacity. Based on differential type memristor cells, this paper proposes an improved crossbar array of the memristor, which can be applied in image storage. By means of theoretical analysis and stimulation, this improved crossbar array of memristor has been proved to have better grayscale image storage capacity, and its peak signal-to-noise ratio (PSNR) has been improved by about 30%.
Key words： memristor; crossbar array; modeling and simulation; image storage
CLD number： TP333 Document code： A
Article ID： 1674-8042（2017）03-0254-07doi： 10.3969/j.issn.1674-80422017-03-007
References
［1］Chua L O. Memristor-the missing circuit element. IEEE Transactions on Circuit Theory, 1971, 18(5): 1507-519.
［2］Carbajal J P, Dambre J, Hermans M, et al. Memristor models or machine learning. Neural Computation, 2015, 27(3): 725-747.
［3］XU Lu, LI Zhi, LI Jian, et al. A novel bit-level image encryption algorithm based on chaotic maps. Optics and Lasers in Engineering, 2016, 78(2): 17-25.
［4］XU Quan, LIN Yi, BAO Bo-cheng, et al. Multiple attractors in a non-ideal active vohage-controlled memristor based Chuais circuit. Chaos, Solitons & Fractals, 2016, 83: 186-200.
［5］Noorden R. Memristor is electronics missing link. Chemistry World, 2008, 5(6): 25.
［6］Strukov D B, Snider G S, Stewart D R, et al. The missing memristor found. Nature, 2008, 453: 80-83.
［7］Avcibas I, Sanbu B, Ssayood K. Statistical evaluation of image quality measures. Journal of Electronic Imaging, 2002, 11(2): 206-213.
［8］XUAN Chun-qing, XUAN Zhi-wei, ZHANG Xia, et al. A blind watermarking algorithm based on DWT and SVD. Journal of Measurement Science and Instrumentation, 2014 , 5(2): 31-35.
［9］YANG Li-bo. Design and analysis of time-resistance conversion circuit. Metallurgical and Mining Industry, 2015, 12(7): 166-171.
［10］HU Xiao-fang, Duan Shu-kai, Wang Li-dan, et al. Memristive crossbar array with applications in image. Science China, 2011, 4(41): 500-512.
［11］Farnood Merrikh-Bayat, Saeed Bagheri, Shourak. Programming of memristor crossbars by using genetic algorith. Procedia Computer Science, 2011, 10(3): 232-237.
一种改进的忆阻器交叉阵列
杨立波1 ，张小勇1,2，梁伟泽1
（1. 太原学院 计算机工程系，山西 太原 030032；2. 中北大学 仪器与动态测试技术教育部重点实验室，山西 太原 030051）
摘要: 本文对忆阻器的惠普模型与差分型忆阻器存储单元进行了分析与研究。 利用惠普模型构成了经典的忆阻器交叉阵列， 并对其存储性能进行了分析与仿真， 提出了一种改进的基于差分型忆阻器单元的忆阻器交叉阵列。 理论分析与仿真表明， 改进的阵列在存储灰度图像时具有更好的效果， 其峰值信噪比提高了约30%。
关键词: 忆阻器； 交叉阵列； 建模与仿真； 图像存储
引用格式：YANG Li-bo, ZHANG Xiao-yong, LIANG Wei-ze. An improved crossbar array of memristor. Journal of Measurement Science and Instrumentation, 2017, 8(3)： 254-260. ［doi： 10. 3969／j. issn. 1674-80422017-03-07］
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