Modeling and validation of magnetic tunnel junction device

Joyanto Roychoudhary1, Sumitesh Majumder2, T K Maiti2

（1. Dept. of Electronics & Communication Engineering, B P Poddar Institute of Managemnent and Technology,  Kolkata 700052, India； 2. Dept. of  Applied  Electronics & Instrumentation Engineering, Netaji Subhash Engineering College, Kolkata 700152, India）

Abstract： We have presented here a simple model of magnetic tunnel junction (MTJ) device and the proposed MTJ model is utilized for validation purpose and also to study its tunnel magneto-resistance (TMR) effect by both simulation and experimental method using an operational amplifier (OPAMP) based inverting amplifier. Experimental results substantiates both the simulated and theoretical outcomes.

Key words： magneto-electronics; magnetic tunnel junction (MTJ); inverting amplifier; MultiSim software

CLD number： O441   Document code： A

Article ID： 1674-8042（2017）03-0261-03doi： 10.3969/j.issn.1674-80422017-03-008

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磁性隧道结器件的建模与验证

Joyanto Roychoudhary1, Sumitesh Majumder2, T K Maiti2

（1. B P Poddar 管理与技术学院 电子与通信工程系， 加尔各答 700052， 印度； 2. 德里理工学院 应用电子与仪器工程系， 加尔各答 700152， 印度）

摘要:描述了一个简单的磁性隧道结器件的模型。利用基于运算放大器的反向放大器通过仿真和实验研究并验证了该模型的隧道磁致电阻效应。实验结果证实了仿真和理论的正确性。

关键词:磁电子学；磁性隧道结；反相放大器；MultiSim 仿真软件

引用格式：Roychoudhary J, Majumder S, Maiti T K. Modeling and validation of magnetic tunnel junction device. Journal of Measurement Science and Instrumentation, 2017, 8(3)： 261-263. ［doi： 10.3969／j.issn.1674-8042.2017-03-08］

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