此页面上的内容需要较新版本的 Adobe Flash Player。

获取 Adobe Flash Player

A 4 MHz Lamé mode microresonator-based oscillator


WU Guo-qiang(吴国强)1,2, XU De-hui(徐德辉)1, XIONG Bin(熊斌)1, WANG Yue-lin(王跃林)1

 


(1. State Key Laboratory of Transducer Technology, Science and Technology on Micro-system Laboratory,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2. University of Chinese Academy of Sciences (UCAS), Beijing 100190, China)

 

Abstract: A 4.13 MHz reference oscillator incorporating a capacitive single-crystal-silicon (SCS) micromechanical resonator is presented. The microresonator is fabricated using a cavity-silicon-on-insulator (cavity-SOI) process and is excited in the Lamé  mode with electrostatic driving and capacitive sensing. The Lamé  mode may be described as a square plate that is contracting along one axis in the fabrication plane, while simultaneously extending along an orthogonal axis in the same plane. The microresonator exhibits a quality factor as high as 1.4×106 and a resonant frequency of 4.13 MHz at a pressure of 0.08 mbar. The output spectrum of the oscillator shows that the silicon micromechanical resonator is adapted as a timing element for a precision oscillator.

 

Key words:single-crystal-silicon (SCS); microresonator; oscillator; microelectromechanical systems (MEMS); bulk acoustic resonators

 

CLD number: TN752 Document code: A

 

Article ID: 1674-8042(2013)02-0132-04 doi: 10.3969/j.issn.1674-8042.2013.02.007

 


References

 

[1] Nguyen C T C. MEMS technology for timing and frequency control. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2007, 54(2): 251-270.
[2] Van Beek J T M , Puers R. A review of MEMS oscillators for frequency reference and timing applications. Journal of Micromechanics and Microengineering, 2012, 22(1): 013001.
[3] Lee J E-Y, Bahreyni B, Zhu Y, et al. Ultrasensitive mass balance based on a bulk acoustic mode single-crystal silicon resonator. Applied Physics Letters, 2008, 91: 234103.
[4] Pourkamali S, Hashimura A, Abdolvand R, et al. High-Q single crystal silicon HARPSS capacitive beam resonators with sub-100 nm transduction gaps. Journal of Microelectromechanical Systems, 2003, 12(4): 487-496.
[5] Khine L, Palaniapan M. High-Q bulk-mode SOI square resonators with straight-beam anchors. Journal of Micromechanics and Microengineering, 2009, 19(1): 015017.
[6] WU Guo-qiang, XU De-hui, XIONG Bin, et al. Wafer-level vacuum packaging for MEMS resonators using glass frit bonding. Journal of Microelectromechanical Systems, 2012, 21(6): 1484-1491.
[7] Kim B, Hopcroft M A, Candler R N, et al. Temperature dependence of quality factor in MEMS resonators. Journal of Microelectromechanical Systems, 2008, 17(3): 755-766.
[8] Kaajakari V, Mattila T, Qja A, et al. Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications. IEEE Electron Device Letters, 2004, 25(4): 173-175.
[9] Lee J E-Y, Bahreyni B, Zhu Y, et al. A single-crystal-silicon bulk-acoustic-mode microresonator oscillator. IEEE Electron Device Letters, 2008, 29(7): 701-703.
[10] WU Guo-qiang, XU De-hui, XIONG Bin, et al. A high performance bulk mode single crystal silicon microresonator based on a cavity-SOI wafer. Journal of Micromechanics and Microengineering, 2012, 22(2): 025020.

 

[full text view]