Effects of precursor solution concentration on dielectric properties of (Pb, La) (Zr, Ti)O3 antifer

LV Yong-bo（吕永博）, GUO Mao-xiang（郭茂香）, GUAN Xin-feng（关新锋）, CHOU Xiu -jian（丑修建）, ZHANG Wen-dong(张文栋)

Key Laboratory of Instrumentation Science & Dynamic Measurement（North Universi ty of China)

Abstract： Pb0.97La0.02Zr0.95Ti0.05O3 (PLZT) antiferro electric thick films derived from different precursor solution concentrations ar e prepared on platinized silicon substrates by sol-gel processing. The films pre sent polycrystalline perovskite structure with a (100) preferred orientation by X-ray diffraction (XRD) analysis. The antiferroelectricity of the films is confi rmed by the double hysteresis behaviors of polarization and double-bufferfly res ponse of dielectric constant under the applied electrical field. Antiferroelectr ic properties and dielectric constant are improved while the polarization charac teristic values are reduced with the increase of precursor solution concentratio n. The films at higher precursor solution concentration exhibit excellent dielec tric properties.

Key words： engineering ceramics; precursor solution concentration; microstructu re; antiferroelectric thick film

CLD number： TB34 Document code： A

Article ID： 1674-8042(2013)03-0294-05 doi： 10.3969/j.issn.1674-8042.2013.03.0 20

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